Method of treating SiPOS passivated high voltage semiconductor d

Details Method of treating SiPOS passivated high voltage semiconductor d Method of treating SiPOS passivated high voltage semiconductor d

1980-05-05

1981-10-27

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 357 13, 357 59, 357 91, H01L 21265, H01L 21205, G06F 1546

Patent

active

042971497

ABSTRACT:
The breakdown voltage of high voltage semiconductor devices passivated with SiPOS deteriorates if the devices are allowed to soak at temperatures in the 400.degree. C. to 525.degree. C. range. The original breakdown voltage is recovered by annealing the devices at a temperature of above about 550.degree. C. prior to metallization and alloying the metal at less than 425.degree. C.

REFERENCES:
patent: 3674995 (1972-07-01), Kendall
patent: 3971061 (1976-07-01), Matsushita et al.
patent: 4001873 (1977-01-01), Kajiwara et al.

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