Method of treating semiconductor wafers in a magnetically confin

Details Method of treating semiconductor wafers in a magnetically confin Method of treating semiconductor wafers in a magnetically confin

1989-11-13

1990-10-02

Morgenstern, Norman

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 38, 156627, 156345, 156626, 118723, 118692, B05D 306, H01L 21306

Patent

active

049606107

ABSTRACT:
In a magnetically confined plasma, optimal pressure is found by measuring the peak to peak voltage of the plasma and looking for a distinct minimum in the peak to peak voltage. The pressure at which the minimum occurs can be used to calibrate a manometer used in the system.

REFERENCES:
patent: 4602981 (1986-07-01), Chen et al.
patent: 4609426 (1986-09-01), Ogawa et al.
patent: 4683838 (1987-08-01), Kimura et al.

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