Method of treating semiconductor substrate surface and method of

Details Method of treating semiconductor substrate surface and method of Method of treating semiconductor substrate surface and method of

1991-06-21

1994-04-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 156643, 156646, H01L 2100, H01L 2102

Patent

active

053066715

ABSTRACT:
A principal feature of the present invention is to clean a surface of a semiconductor substrate without providing a damaged layer to the surface thereof. A native oxide film formed on the surface of a silicon substrate is etched by plasma employing a gas containing fluorine. The surface of the semiconductor substrate is again subjected to plasma etching by employing a gas containing fluorine in order to remove a surface damaged layer and a fluorocarbon layer formed in the above step of plasma etching. The semiconductor substrate surface is irradiated with ultraviolet rays under a low pressure in order to dissociate and remove fluorine atoms chemically adsorbed to the semiconductor substrate surface upon the latter plasma etching.

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