Method of treating metal nitride films to reduce silicon migrati

Details Method of treating metal nitride films to reduce silicon migrati Method of treating metal nitride films to reduce silicon migrati

1994-12-30

1998-01-27

Niebling, John

Fishing, trapping, and vermin destroying

437190, 437192, 427535, H01L 2128

Patent

active

057121931

ABSTRACT:
A method of treating the surface of a metal nitride barrier layer on an integrated circuit to reduce the movement of silicon through the barrier. The metal nitride barrier (such as TiN) is exposed to a nitrogen plasma, thereby improving the barrier properties of the metal nitride barrier.

REFERENCES:
patent: 5232871 (1993-08-01), Ho
patent: 5389575 (1995-02-01), Chin et al.
patent: 5567483 (1996-10-01), Foster et al.
patent: 5593511 (1997-01-01), Foster et al.
Stanley Wolf "Silicon Processing for the VLSI Era, vol. II" Lattice Press, Calif. (1990) pp. 192-193.

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