Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-12-11
2007-12-11
Malsawma, Lex (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C257SE21582, C205S125000
Reexamination Certificate
active
11327493
ABSTRACT:
A method of treating a conductive layer to assure enhanced adhesion of the layer to selected dielectric layers used to form a circuitized substrate. The conductive layer includes at least one surface with the appropriate roughness to enable such adhesion and also good signal passage if the layer is used as a signal layer. The method is extendible to the formation of such substrates, including to the formation of multilayered substrates having many conductive and dielectric layers. Such substrates may include one or more electrical components (e.g., semiconductor chips) mounted thereon and may also be mounted themselves onto other substrates.
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Egitto Frank D.
Krasniak Stephen
Lauffer John M.
Markovich Voya R.
Matienzo Luis J.
Endicott Interconnect Technologies, Inc.
Fraley Lawrence R.
Hinman, Howard & Kattell LLP
Malsawma Lex
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