Method of treating bodies of III-V compound semiconductor materi

Details Method of treating bodies of III-V compound semiconductor materi Method of treating bodies of III-V compound semiconductor materi

1985-11-01

1989-04-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG65, 148DIG84, 156DIG73, 357 61, 437247, 437945, 437949, H01L 21477

Patent

active

048206512

ABSTRACT:
A method of rapid thermal annealing a wafer of an ion implanted III-V compound semiconductor material by heating the wafer in close proximity to a III-V compound semiconductor wafer coated with a layer of tin or indium. A localized overpressure of the Group V element is produced by the combination of the III and V elements with the tin or indium tending to reduce surface decomposition of the implanted wafer.

REFERENCES:
patent: 2979428 (1961-04-01), Jenny et al.
patent: 2995475 (1961-08-01), Sharpless
patent: 4312681 (1982-01-01), Rupprecht et al.

Affiliated with

Also associated with

Rating

Method of treating bodies of III-V compound semiconductor materi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of treating bodies of III-V compound semiconductor materi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of treating bodies of III-V compound semiconductor materi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-667013