Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-04-24
2007-04-24
Luu, Chuong Anh (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S257000, C438S655000, C438S760000
Reexamination Certificate
active
11043950
ABSTRACT:
The invention provides a simple method of treating a structured surface comprising a higher surface in a first region and a lower surface in the second region. A plurality of layers is deposited on said surface wherein a lower layer exhibits a higher polishing rate than an upper layer and wherein the thickness of the plurality of layers exceeds the step height. Afterwards the plurality of layers is chemically mechanically polished such that the lower layer is at least partly removed in the first region. By this method achieves a better planarization. Additionally, smaller top contact openings after a wet clean step are achievable and a deformation of contact openings due to annealing steps is reduced.
REFERENCES:
patent: 6340611 (2002-01-01), Shimizu et al.
patent: 6559027 (2003-05-01), Ishitsuka et al.
Dittkrist Thomas
Graf Werner
Kroenke Matthias
Infineon - Technologies AG
Luu Chuong Anh
Morrison & Foerster / LLP
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