Method of treating a silicon single crystal ingot

Details Method of treating a silicon single crystal ingot Method of treating a silicon single crystal ingot

1978-06-15

1980-03-18

Kellogg, Arthur D.

Glass manufacturing

Processes

With chemically reactive treatment of glass preform

65104, 65105, 65112, 65DIG15, 156600, 156DIG64, 156DIG73, C03C 1500

Patent

active

041937830

ABSTRACT:
A method of treating a silicon single crystal ingot which comprises the steps of purposely producing lattice strains in a silicon single crystal ingot, annealing the ingot at high temperature, and etching off the surface of the annealed ingot, thereby suppressing the occurrence of lattice defects.

REFERENCES:
patent: 3266961 (1966-08-01), Emeis
"Minimizing, Process-Induced Slip in Silicon Wafers by Slow Heating and Cooling", Journal Electrochemical Society (U.S.A.) vol. 123, No. 3, Mar. 1976, pp. 434-435, by W. A. Fisher and G. L. Schnable.
"Argon Implantation Gettering for a `Through Oxide` Arsenic-Implanted Layer" by K. Murase & H. Haradd, Journal of Applied Physics, vol. 48, No. 10, Oct. 1977, pp. 4404-4406.

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