Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-08-07
2008-11-11
Chen, Kin-Chan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S710000, C438S714000
Reexamination Certificate
active
07449414
ABSTRACT:
A method of pre-treating a mask layer prior to etching an underlying thin film is described. A thin film, such as a dielectric film, is etched using plasma that is enhanced with a ballistic electron beam. In order to reduce the loss of pattern definition, such as line edge roughness effects, the mask layer is treated with a hydrocarbon chemistry or hydrofluorocarbon chemistry or fluorocarbon chemistry or combination of two or more thereof prior to proceeding with the etching process.
REFERENCES:
patent: 4357369 (1982-11-01), Kilichowski et al.
patent: 5597438 (1997-01-01), Grewal et al.
patent: 5714306 (1998-02-01), Komatsu et al.
patent: 6025115 (2000-02-01), Komatsu et al.
patent: 6093332 (2000-07-01), Winniczek et al.
patent: 6326307 (2001-12-01), Lindley et al.
patent: 6358670 (2002-03-01), Wong et al.
patent: 6617253 (2003-09-01), Chu et al.
patent: 6635185 (2003-10-01), Demmin et al.
patent: 6774044 (2004-08-01), Ke et al.
patent: 2005/0048789 (2005-03-01), Merry et al.
patent: 2005/0103748 (2005-05-01), Yamaguchi et al.
patent: 2006/0037701 (2006-02-01), Koshiishi et al.
U.S. Appl. No. 11/499,680, filed Aug. 7, 2006, Ventzek et al.
U.S. Appl. No. 11/499,678, filed Aug. 7, 2006, Ventzek et al.
U.S. Appl. No. 11/499,679, filed Aug. 7, 2006, Ventzek et al.
Fluorine Atom Subsurface Diffusion and Reaction in Photoresist by Frank Greer et at., Journal of Applied Physics, vol. 94, Nov. 12, Dec. 15, 2003.
Vacuum Beam Studies of Photoresist Etching Kinetics by Frank Greer et al., 2288 J Vac. Sci. Technol. A 18(5), Sep./Oct. 2000.
Fundamental Beam Studies of Deuterium and Fluorine Radical Reaction Kinetics on Surfaces by Frank Greer et al., 1391 J. Vac. Sci. Technol. B 21(4), Jul./Aug. 2003.
Deuterium and Fluorine Radical Reaction Kinetics on Photoresist by Frank Greer et al., 145 J. Vac. Sci. Technol. B 20(1), Jan./Feb. 2002.
Argon and Oxygen Ion Chemistry Effects in Photoresist Etching by Frank Greer et al., 1901 J. Vac. Sci. Technol. B 20(5), Sep./Oct. 2002.
Effect of Different Frequency Combination on ArF Photoresist Deformation and Silicon Dioxide Etching in the Dual Frequency Superimposed Capacitively Coupled Plasmas by C. H. Lee et al., 1386 J. Vac. Sci. Technol. A 24(4), Jul./Aug. 2006.
Deposition Control for Reduction of 193 nm Photoresist Degradation in Dielectric Etching by H. Negishi et al., 217 J. Vac. Sci. Technol. B 23(1), Jan./Feb. 2005.
Chen Lee
Koshiishi Akira
Sawada Ikuo
Ventzek Peter L. G.
Chen Kin-Chan
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tokyo Electron Limited
LandOfFree
Method of treating a mask layer prior to performing an... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of treating a mask layer prior to performing an..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of treating a mask layer prior to performing an... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4041827