Method of treating a layer of silicon dioxide

Details Method of treating a layer of silicon dioxide Method of treating a layer of silicon dioxide

1976-03-08

1977-02-08

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

148 15, 148186, 204164, 357 52, 427 82, 427 93, 427377, 427379, B05D 306

Patent

active

040072940

ABSTRACT:
A layer of silicon dioxide such as used in an MOS gate dielectric, is treated, after growth, to prevent deleterious effects resulting from any mobile impurity ions therein. An ionic fluoride compound is applied to one surface of the layer of silicon dioxide. A corona discharge is then directed from a negative electrode of a pair of electrodes of opposite polarity onto the fluoride compound to drive the fluoride ions into the layer. The layer is then washed and annealed.

REFERENCES:
patent: 3556879 (1971-01-01), Mayer
patent: 3698945 (1972-10-01), Yokozawa et al.
patent: 3711324 (1973-01-01), Glendinning et al.
patent: 3755092 (1973-08-01), Antola

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