Method of trapping ion in silicon oxide film or silicon oxy-nitr

Details Method of trapping ion in silicon oxide film or silicon oxy-nitr Method of trapping ion in silicon oxide film or silicon oxy-nitr

1990-12-05

1992-03-31

Tufariello, T. M.

Electrolysis: processes, compositions used therein, and methods

Electrolytic coating

Utilizing nonaqueous bath

C25D 1132

Patent

active

051005190

ABSTRACT:
In a method of trapping ions in a silicon oxide film or a silicon oxy-nitride film, silicon or silicon nitride as an electrode is first immersed in a nonaqueous solvent containing an electrolyte. Then, a voltage is applied between the electrode and a counter electrode so as to oxidize the surface of the silicon or silicon nitride to form a silicon oxide film or a silicon oxy-nitride film. At the same time, the ions contained in the electrolyte are caused to permeate into the silicon oxide film or the silicon oxy-nitride film and trapped therein. The method is thus capable of trapping ions in a silicon oxide film or a silicon oxy-nitride film for a short time without using any evaporation apparatus and of shifting the flat band potential of the silicon.

REFERENCES:
patent: 3345275 (1967-10-01), Schmidt

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