Method of transferring strained semiconductor structure

Details Method of transferring strained semiconductor structure Method of transferring strained semiconductor structure

2006-12-18

2009-12-29

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S457000, C438S406000, C438S508000

Reexamination Certificate

active

07638410

ABSTRACT:
The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the deposited multilayer structure is bonded to a second substrate and is separated away at the interface, which results in transferring a multilayer structure from one substrate to the other substrate. The multilayer structure includes at least one strained semiconductor layer and at least one strain-induced seed layer. The strain-induced seed layer can be optionally etched away after the layer transfer.

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