Method of transferring devices by lateral etching of a...

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies

Reexamination Certificate

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C438S149000, C438S739000

Reexamination Certificate

active

06982209

ABSTRACT:
The present invention relates to a method for transferring devices. A sacrificing layer is positioned before the devices are manufactured, and a transition substrate is pasted on the devices. Then, a method for lateral wet etching or a method for lateral wet etching with mechanical stripping is applied for removing or stripping the sacrificing layer so as to separate the devices and a substrate. The separated devices are transferred to the transition substrate so as to meet the requirements for various products and applications.

REFERENCES:
patent: 6339010 (2002-01-01), Sameshima
patent: 2003/0157783 (2003-08-01), Fonash et al.
patent: 2003/0170965 (2003-09-01), Kondo
patent: 2004/0048447 (2004-03-01), Kondo
patent: 2004/0102020 (2004-05-01), Roberds et al.

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