Method of transferring a thin crystalline semiconductor layer

Details Method of transferring a thin crystalline semiconductor layer Method of transferring a thin crystalline semiconductor layer

2006-12-26

2006-12-26

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

C438S459000, C438S311000, C257SE21008, C257S143000, C257S335000

Reexamination Certificate

active

07153761

ABSTRACT:
A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.

REFERENCES:
patent: 4846931 (1989-07-01), Gmitter et al.
patent: 5374564 (1994-12-01), Bruel
patent: 5877070 (1999-03-01), Goesele et al.
patent: 6291313 (2001-09-01), Henley et al.
patent: 6352909 (2002-03-01), Usenko
patent: 6486041 (2002-11-01), Henley et al.
patent: 6500732 (2002-12-01), Henley et al.
patent: 6573126 (2003-06-01), Cheng et al.
patent: 6713326 (2004-03-01), Cheng et al.
patent: 6790747 (2004-09-01), Henley et al.
patent: 6806171 (2004-10-01), Ulyashin et al.
patent: 2005/0070071 (2005-03-01), Henley et al.
Yonehara et al., “Epitaxial Layer Transfer by Bond and Etch Back of Porous Si,” Appl. Phys. Lett. 64 (16), Apr. 1994.
Ishizaka et al., “Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE,” J.Electrochem Soc., Apr. 1986, vol. 133 (4), pp. 666-671.

Affiliated with

Also associated with

Rating

Method of transferring a thin crystalline semiconductor layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of transferring a thin crystalline semiconductor layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of transferring a thin crystalline semiconductor layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3713836