Method of tightly joining two semiconductor substrates

Details Method of tightly joining two semiconductor substrates Method of tightly joining two semiconductor substrates

1988-08-31

1990-10-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 67, 437946, 437974, 148DIG12, 148DIG135, H01L 2176

Patent

active

049620622

ABSTRACT:
Two semiconductor substrates, each having a polished surface and at least one groove is formed in the surface of at least one of the two substrates, are tightly and inseparably joined by the steps of wetting the polished surface of at least one of the two substrates with a liquid not containing any solute that causes precipitation of a solid substance upon evaporation of the liquid, e.g. methanol or water, placing one substrate on the other so as to bring the polished surfaces of the two substrates into contact with each other with intervention of a thin film of the liquid therebetween and, after a while, subjecting the provisionally joined substrates to a heat treatment and then forming a dielectric layer of organic polymer or silicon compound in at least one groove. This method is suitable for joining silicon substrates such as silicon wafers now on the market. The two semiconductor substrates may be different in the type of conductivity or in the concentration of impurity, and at least one of the two substrates may have a diffused layer, a dielectric layer of a polycrystalline layer as a surface layer having the polished surface.

REFERENCES:
patent: 4638552 (1987-01-01), Shimbo et al.
patent: 4700466 (1987-10-01), Nakagawa et al.
patent: 4738935 (1988-04-01), Shimbo et al.

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