Method of thermally processing semiconductor wafers and an appar

Details Method of thermally processing semiconductor wafers and an appar Method of thermally processing semiconductor wafers and an appar

1993-03-05

1993-11-09

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118724, 219390, C23C 1600

Patent

active

052598837

ABSTRACT:
An apparatus for thermally processing semiconductor wafers within a reaction tube in which the wafers are thermally processed in a higher temperature region within the reaction tube. The thermally processed semiconductor waters are moved into a lower temperature region within the reaction tube. The rate of heat radiated from the thermally processed semiconductor waters is reduced in the lower temperature region within the reaction tube.

REFERENCES:
patent: 2145324 (1939-01-01), Stauss
patent: 3047438 (1962-07-01), Marinace
patent: 3171755 (1965-03-01), Reuschel
patent: 3314393 (1967-04-01), Haneta
patent: 3473510 (1969-10-01), Sheng
patent: 3828722 (1974-08-01), Reuter
patent: 4284867 (1981-08-01), Hill
patent: 4293590 (1981-10-01), Takagi
Semiconductor World (Monthly), Takamasa Sakai et al. (Dai Nihon Screen Man.) Jan. 1987, p. 43, New High Speed Heat Treating Furnace.

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