Method of testing semiconductor

Semiconductor device manufacturing: process – With measuring or testing – Packaging or treatment of packaged semiconductor

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Details

428601, 428620, 324754, 324762, 2281791, G01R 3126, H01L 2166

Patent

active

059982284

ABSTRACT:
Resilient contact structures are mounted directly to bond pads on semiconductor dies, prior to the dies being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies to be exercised (e.g., tested and/or burned-in) by connecting to the semiconductor dies with a circuit board or the like having a plurality of terminals disposed on a surface thereof. Subsequently, the semiconductor dies may be singulated from the semiconductor wafer, whereupon the same resilient contact structures can be used to effect interconnections between the semiconductor dies and other electronic components (such as wiring substrates, semiconductor packages, etc.). Using the all-metallic composite interconnection elements of the present invention as the resilient contact structures, burn-in can be performed at temperatures of at least 150.degree. C., and can be completed in less than 60 minutes.

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patent: 5055780 (1991-10-01), Takagi et al.
patent: 5187020 (1993-02-01), Kwon et al.
patent: 5489538 (1996-02-01), Rostoker et al.
patent: 5518964 (1996-05-01), DiStefano et al.
patent: 5525545 (1996-06-01), Grube et al.
patent: 5756370 (1998-05-01), Farnworth et al.
patent: 5783461 (1998-07-01), Hembree

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