Method of testing radiation hardness of a semiconductor device

Details Method of testing radiation hardness of a semiconductor device Method of testing radiation hardness of a semiconductor device

1978-01-16

1979-09-18

Dixon, Harold A.

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

250316, 324158T, G01T 122

Patent

active

041684320

ABSTRACT:
A body of semiconductor material having a layer of an oxide on a surface thereof is subjected to a negative corona discharge in air to deposit a negative charge on the outer surface of the oxide. This results in an immobile positive charge at the interface between the oxide layer and the semiconductor body. The amount of this positive charge, which can be measured by standard MOS capacitance measurements, indicates the radiation hardness of the device.

REFERENCES:
patent: 2805347 (1957-04-01), Haynes et al.
patent: 3493752 (1970-02-01), Jund et al.
patent: 3723873 (1973-03-01), Witteles
patent: 3748579 (1973-07-01), Henry et al.
patent: 3840809 (1974-10-01), Yun
patent: 3882391 (1975-05-01), Liles
patent: 3995216 (1976-11-01), Yun

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