Specialized metallurgical processes – compositions for use therei – Processes – Producing or purifying free metal powder or producing or...
Patent
1994-01-31
1995-12-12
Simmons, David A.
Specialized metallurgical processes, compositions for use therei
Processes
Producing or purifying free metal powder or producing or...
420528, 420555, 420576, 420579, 420903, 423289, 423299, 252 623GA, C22C 1200, C22C 2800, C01B 2508, C01B 3504
Patent
active
054745918
ABSTRACT:
The present invention relates, in general, to a method of synthesizing nanocrystals and, in particular, to a method of synthesizing III-V semiconductor nanocrystals in solution at a low temperature and in a high yield. The method comprises the combination of mixing a Na/K alloy with an excess of Group VA element (E) in an aromatic solvent to form a (Na/K).sub.3 E pnictide, and subsequently mixing the pnictide with a Group IIIA trihalide (MX.sub.3) in a coordinating solution to form a suspension that includes the nanocrystalline semiconductor.
REFERENCES:
patent: 4798701 (1989-01-01), David
patent: 4902486 (1990-02-01), Theopold et al.
patent: 5023139 (1991-06-01), Birnboim et al.
patent: 5084128 (1992-01-01), Baker
patent: 5215631 (1993-06-01), Westfall
patent: 5262357 (1993-11-01), Alivisatos et al.
Richard L. Wells, "The Use of Silylarsines to Prepare Gallium-Arsenic Compounds", Coord Chem Rev 112 (1992) 273-291.
Weller, "Quantized Semiconductor Particles: A Novel State of Matter for Materials Science", Advanced Materials 5(2):88-95 (1993).
Stucky, "The Interface of Nanoscale Inclusion Chemistry", Progress in Inorganic Chemistry 40:99-179 (1992).
Stucky et al, "Quantum Confinement and Host/Guest Chemistry: Probing a New Dimension", Science 24:669-678 (1990).
Steigerwald et al, "Semiconductor Crystallites: A Class of Large Molecules", Acc. Chem. Res. 23(6):183-188 (1990).
Siegel, "Exploring Mesoscopia: The Bold New World of Nanostructures", Physics Today 46(10):64-68 (1993).
Goldstein et al, "Melting in Semiconductor Nanocrystals", Science 256:1425-1427 (1992).
Wells et al, "Use of Tris(trimethylsilyl)arsine To Prepare Gallium Arsenide and Indium Arsenide", Chemistry of Materials 1(1):4-6 (1989).
Wells et al, "The Use of Tris(trimethylsily)arsine to Prepare AlAs, GaAs and InAs. The X-Ray Crystal Structure of (Me.sub.3 Si)AsAlCl.sub.3 -C.sub.7 H.sub.8 ", Mat. Res. Soc. Symp. Proc. 131:45-50 (1989).
Wells et al, "Preparation of a Novel Gallium Arsenide Single-Source Precursor Having the Empirical Formula AsCl.sub.3 Ga.sub.2 ", Chem. Mater. 3:381-382 (1991).
Wells et al, "Synthesis, Characterization, and Thermal Decomposition of [Cl.sub.2 GaP(SiMe.sub.3).sub.2 ].sub.2, a Potential Precursor to Gallium Phosphide", Organometallics 12(7):2832 (1993).
Aubuchon et al, "Preparation, Characterization and Facile Thermolysis of pX.sub.2 GaP(SiMe.sub.3).sub.2 ].sub.2 (X.dbd.Br, I) and Cl.sub.3 Ga.sub.2 P)n: New Precursors to Nanocrystalline Gallium Phosphide", Chem. Mater. 6(1):82-86 (1994).
Butler et al, "Preparation and Spectroscopic Characterization of Highly Confined Nanocrystallites of GaAs in Decane", J. Phys. Chem. 97:10750-10755 (1993).
Olshavsky et al, "Organometallic Synthesis of GaAs Crystallites Exhibiting Quantum Confinement", J. Am. Chem. Soc. 112:9438-9439 (1990).
Uchida et al, "GaAs Nanocrystals Prepared in Quinoline", J. Phys. Chem. 95:5382-5384 (1991).
Uchida et al, "Optical Properties of GaAs Nanocrystals", J. Phys. Chem. 96:1156-1160 (1992).
Uchida et al, "Preparation and Optical Nonlinearity of Quantized InAs Nanocrystals", Chem. Mater. 5:716-719 (1993).
Treece et al, "Sythesis of III-V Semiconductors by Solid-State Metathesis", Inorg. Chem. 32:2745-2752 (1993).
Treece et al, "From Ceramics to Superconductors: Rapid Materials Synthesis by Solid-State Metathesis Reactions", Mat. Res. Soc. Symp. Proc. 271:169-175 (1992).
Treece et al, "Rapid Synthesis of GaP and GaAs from Solid-State Precursors", Chem. Mater. 4:9-11 (1992).
Wiley et al, "Rapid Solid-State Precursor Synthesis of Materials", Science 255:1093-1097 (1992).
Peterson et al, "Preparation and Methylation of Alkali Metal Phosphides", J. Inorg. Nucl. Chem. 28:53-60 (1966).
"X-Ray Diffraction Procedures for Polycrystalline and Amorphous Materials", Harold P. Klug and Leory E. Alexander, New York, John Wiley & Sons, Inc., London.
Sandroff et al, "GaAs Clusters in the Quantum Size Regime: Growth on High Surface Area Silica by Molecular Beam Epitaxy", Science 245:391-393 (1989).
Comprehensive Coordination Chemistry, The Synthesis, Reactions, Properties & Applications of Coordination Compounds, vol. 3, editor-in-chief Sir Geoffrey Wilkinson, eds. Robert D. Gillard, Jon A. McCleverty, Pergamon Press.
Bock et al, "Solution of Gallium Trichloride in Ethers: A .sup.71 Ga NMR Study and the X-Ray Structure of GaCl.sub.3. Monoglyme", Z. Naturforsch, 45b:979-984 (1990).
Noth et al, "An Investigation of AlCl.sub.3 Solutions in Ethers by .sup.27 Al NMR Spectroscopy", Z. Naturforsch. 37b:29-37 (1982).
Kher Shreyas S.
Wells Richard L.
Duke University
Phipps Margery S.
Simmons David A.
LandOfFree
Method of synthesizing III-V semiconductor nanocrystals does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of synthesizing III-V semiconductor nanocrystals, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of synthesizing III-V semiconductor nanocrystals will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1357236