Method of surface protection of a semiconductor wafer during pol

Details Method of surface protection of a semiconductor wafer during pol Method of surface protection of a semiconductor wafer during pol

1993-01-19

1995-06-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

H01L 21306

Patent

active

054242240

ABSTRACT:
The protection to the backside of the semiconductor wafer is accomplished by applying a layer of silicon oxide or silicon nitride or other deposited material to the back surface of a semiconductor wafer to protect against particles, scratches, and etching by mild caustic solutions. The layer remains in place during all three processes, edge pre-polish, mirror edge polish, and wafer polish.

REFERENCES:
patent: 4384919 (1983-05-01), Casey
patent: 4588473 (1986-05-01), Hisatomi et al.
patent: 5071776 (1991-12-01), Matsushita
patent: 5128281 (1992-07-01), Dyer et al.

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