Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-01-02
2007-01-02
Sarkar, Asok K. (Department: 2891)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S048000, C438S057000, C257SE27006
Reexamination Certificate
active
10855088
ABSTRACT:
A method of fabricating a CMR thin film for use in a semiconductor device includes preparing a CMR precursor in the form of a metal acetate based acetic acid solution; preparing a wafer; placing a wafer in a spin-coating chamber; spin-coating and heating the wafer according to the following: injecting the CMR precursor into a spin-coating chamber and onto the surface of the wafer in the spin-coating chamber; accelerating the wafer to a spin speed of between about 1500 RPM to 3000 RPM for about 30 seconds; baking the wafer at a temperature of about 180° C. for about one minute; ramping the temperature to about 230° C.; baking the wafer for about one minute at the ramped temperature; annealing the wafer at about 500° C. for about five minutes; repeating said spin-coating and heating steps at least three times; post-annealing the wafer at between about 500° C. to 600° C. for between about one to six hours in dry, clean air; and completing the semiconductor device.
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Evans David R.
Hsu Sheng Teng
Li Tingkai
Pan Wei
Zhuang Wei-Wei
Sarkar Asok K.
Sharp Laboratories of America Inc.
Varitz PC Robert D.
Yevsikov Victor V.
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