Method of stripping photoresist

Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...

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134 29, 134 38, C03C 2300, B08B 700, B08B 3000

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active

042027039

ABSTRACT:
A solution of tetramethylammonium hydroxide and a surfactant in a lower alcohol solubilizes photoresist films without attacking materials found in integrated circuit devices so that a subsequent 1,1,1-trichloroethane rinse completely removes the photoresist.

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patent: 4089704 (1978-05-01), Heiss, Jr. et al.

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