Method of storing a data bit including melting and cooling a...

Details Method of storing a data bit including melting and cooling a... Method of storing a data bit including melting and cooling a...

2005-11-29

2005-11-29

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

C257S010000, C257S016000

Reexamination Certificate

active

06969868

ABSTRACT:
Alloy memory structures and methods are disclosed wherein a layer or volume of alloy material changes conductivity subsequent to introduction of a electron beam current-induced change in phase of the alloy, the conductivity change being detected using current detection means such as photon-emitting P-N junctions, and being associated with a change in data bit memory state.

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patent: 5471040 (1995-11-01), May
patent: 6087674 (2000-07-01), Ovshinsky et al.
patent: 6636477 (2003-10-01), Miyamoto et al.
patent: 6707087 (2004-03-01), Fricke et al.

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