Method of storing a data bit in a fast-write alloy

Details Method of storing a data bit in a fast-write alloy Method of storing a data bit in a fast-write alloy

2005-07-29

2008-12-02

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S022000, C438S029000, C438S048000

Reexamination Certificate

active

07459321

ABSTRACT:
Alloy memory structures and methods are disclosed wherein a layer or volume of alloy material changes conductivity subsequent to introduction of a electron beam current-induced change in phase of the alloy, the conductivity change being detected using current detection means such as photon-emitting P-N junctions, and being associated with a change in data bit memory state.

REFERENCES:
patent: 4817053 (1989-03-01), Ikeda et al.
patent: 4876667 (1989-10-01), Ross et al.
patent: 5471040 (1995-11-01), May
patent: 6087674 (2000-07-01), Ovshinsky et al.
patent: 6636477 (2003-10-01), Miyamoto et al.
patent: 6707087 (2004-03-01), Fricke et al.
patent: 2003/0206512 (2003-11-01), Ashton

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