Method of stabilizing semiconductor device by converting doped p

Details Method of stabilizing semiconductor device by converting doped p Method of stabilizing semiconductor device by converting doped p

1978-09-25

1979-12-18

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148186, 148187, 357 23, 357 59, H01L 2126

Patent

active

041793110

ABSTRACT:
A method for making a semiconductor device is described in which polycrystalline silicon is vacuum deposited and then converted to silicon dioxide thereby providing a number of advantages over direct deposition of silicon dioxide. The method has particular applicability to isoplanar MOSFET integrated circuit manufacturing.

REFERENCES:
patent: 3898105 (1975-08-01), Mai et al.
patent: 3909304 (1975-09-01), Cho
patent: 3966501 (1976-06-01), Nomura et al.
patent: 4013484 (1977-03-01), Boleky et al.
patent: 4023195 (1977-05-01), Richman
patent: 4039359 (1977-08-01), Nakamoto
patent: 4045249 (1977-08-01), Hotta
patent: 4113533 (1978-09-01), Okumura et al.
Nomura et al., ". . Oxidation of Si . . . ", Ion Implantation in Semiconductor, Ed. Namba, Plenum, 1974, N.Y., p. 681.
Fritzsches et al. ". . . Oxid. of Si after Ion Impl. 11, J. Electrochem. Soc. 20 (1973), 1603.

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