Method of stabilizing amorphous semiconductors

Details Method of stabilizing amorphous semiconductors Method of stabilizing amorphous semiconductors

1989-09-28

1990-10-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437174, 437247, 437101, 437943, H01L 21477, H01L 2142

Patent

active

049652257

ABSTRACT:
An amorphous semiconductor film is prepared by the usual procedure and, then, established by exposing it to sufficient light intermittently to age the same. The degradation of the electrical characteristics of the semiconductor film on prolonged exposure to light is minimized by the above technique. The preferred intermittent light is a pulsed light. The above light treatment may be applied to an individual semiconductor film, a laminated assembly including at least the pin layers, a finished semiconductor device such as a solar cell or a semiconductor device prior to attachment of an electrode.

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M. O. Thompson et al., Phys. Rev. Lett., vol. 52, #26, p. 2360.
H. Voll Traver et al., "Light-Induced Changes in a-SI:H at High Illumination", in Proc. 18th IEEE Photovoltaic Specialists Conference, p. 1760.
Navkhandewqla, R. V. et al., Phys. Rev. B, vol. 24, No. 12, p. 7443.
A New Stable a-SIC/a-SiH Heterojunction Solar Cells, Included in Proceedings of the 18th IEEE Photovoltaic Specialist Conference, Las Vegas, Nev., Oct. 21-25, 1985.

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