Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2011-08-23
2011-08-23
Lee, Cheung (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S473000, C438S514000, C438S690000, C257SE21317, C257SE21318, C257SE21568
Reexamination Certificate
active
08003493
ABSTRACT:
A process for splitting a semiconductor substrate having an identification notch on its periphery, by creating a weakened zone in the substrate by implanting atomic species into the substrate while the substrate is held in place on a portion of its periphery during the implanting; and splitting the substrate along the weakened zone by placing the held portion of the substrate in a splitting-wave initiation sector while positioning the notch for initiating a splitting wave followed by the propagation of the wave into the substrate. During splitting the notch is positioned so that it is in a quarter of the periphery of the substrate diametrically opposite the sector for initiating the splitting wave or in the quarter of the periphery of the substrate that is centered on the sector.
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International Search Report, PCT/EP2008/064200, mailed Feb. 6, 2009.
Ben Mohamed Nadia
Kerdiles Sébastien
Lee Cheung
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
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