Method of spark-processing silicon and resulting materials

Details Method of spark-processing silicon and resulting materials Method of spark-processing silicon and resulting materials

2007-07-31

2007-07-31

Owens, Douglas W. (Department: 2821)

Electric lamp and discharge devices: systems

Plural power supplies

Plural cathode and/or anode load device

C204S164000, C438S466000

Reexamination Certificate

active

11182372

ABSTRACT:
The subject invention pertains to a method of spark processing silicon and resulting materials. The subject invention also relates to electroluminescent devices incorporating the materials produced by the subject method. The subject method for spark-processing can enhance the EL output, as compared with conventional spark-processed (sp) silicon. The enhancement of EL output can be due, at least in part, to increasing the light emitting area. The subject method can smooth the sp surface, so as to allow more complete coverage of the sp area with a continuous, semitransparent, conducting film. The smoothening of the sp surface can be accomplished by, for example, introducing into the spark plasma a volatile liquid, such as methanol, ethanol, acetone, in which particles can be suspended and/or in which a heavy ion salt is dissolved. The particles preferably float in the volatile liquid, rather than settle quickly. In a specific embodiment, silicon particles in the range of about 0.2 μm to about 20 μm in size can be suspended in the volatile liquid, such as methanol. The volatile liquid/silicon-particle suspension or volatile liquid/heavy ion salt solution, can then be inserted into a means for applying the mixture to the surface of a silicon wafer during spark-processing.

REFERENCES:
patent: 3745104 (1973-07-01), Hou
patent: 4226897 (1980-10-01), Coleman
patent: 4772498 (1988-09-01), Bertin et al.
patent: 4861533 (1989-08-01), Bertin et al.
patent: 5244639 (1993-09-01), Aratani et al.
patent: 5256339 (1993-10-01), Thorton et al.
patent: 5275967 (1994-01-01), Taniguchi et al.
patent: 5397429 (1995-03-01), Hummel et al.
patent: 5468357 (1995-11-01), Upadhya et al.
patent: 5510633 (1996-04-01), Orlowski et al.
patent: 5552328 (1996-09-01), Orlowski et al.
patent: 5597621 (1997-01-01), Hummel et al.
patent: 5723027 (1998-03-01), Serole
patent: 5723348 (1998-03-01), Kumomi et al.
patent: 5733662 (1998-03-01), Bogachek
patent: 5756924 (1998-05-01), Early
patent: 5811030 (1998-09-01), Aoki
patent: 5830540 (1998-11-01), Bowers
patent: 6083355 (2000-07-01), Spence
patent: 6113746 (2000-09-01), Hack et al.
patent: 6264801 (2001-07-01), Hack et al.
patent: 6280799 (2001-08-01), Okabe et al.
patent: 6316062 (2001-11-01), Sakaguchi et al.
patent: 6369405 (2002-04-01), Canham et al.
patent: 6468602 (2002-10-01), Sakaguchi et al.
patent: 6469605 (2002-10-01), Hack et al.
patent: 6613276 (2003-09-01), Munir et al.
patent: 6630356 (2003-10-01), Armstrong et al.
patent: 6683367 (2004-01-01), Stalmans et al.
patent: 6780219 (2004-08-01), Singh et al.
patent: 6780649 (2004-08-01), Armstrong et al.
patent: 6787453 (2004-09-01), Abell
patent: 2001/0018938 (2001-09-01), Arai et al.
patent: 2002/0064606 (2002-05-01), Sakaguchi et al.
patent: 2004/0149353 (2004-08-01), Hill
Hummel, R.E. et al., “Novel technique for preparing porous silicon”,Appl. Phys. Lett.1992, 1965-7, vol. 61.
Morisaki, H. et al., “Above-band-gap photoluminescence from Si fine particles with oxide shell,” J. Appl. Phys., 1991, pp. 1869-1870, vol. 70.
Shepherd, N., et al. “Improved Electroluminescence of Spark-Processed Silicon by an Aerosol-Assisted Technique”Phys. Stat. Sol.,May 9, 2003, pp. 222-227, vol. 197, No. 1, Wiley-VCH, Weinheim.
Silicon Based Materials and Devices, edited by NALWA, H.S., Academic Press, vol. 1, (chapter 6 by R.E. Hummel) pp. 238-266, 2001.
St. John, J.V. et al. “Formation of Europium Oxide Structures on Crystalline Silicon by Spark Processing, Proceedings of the International Symposium on Advanced Luminescent Materials,” 1996, Chicago, Oct. 8-13, 1985, Electrochem Soc p. 423-431.
Stora, M.E. et al. “Variation of Spark-Processing Parameters on the Photoluminescence Properties of Spark-Processed Silicon”Journal of Physics and Chemistry of Solids, Sep. 2002, pp. 1655-1668, vol. 63, Elsevier Science Ltd.
Yuan, J. et al. “Electroluminescence from Spark-Processed Silicon”Applied Phys. Lett., Nov. 27, 1995., pp. 3328-3330, vol. 67, Is. 22, American Institute of Physics.
Yuan, J. et al. “Electroluminescence and Nature of Lightly Spark-Processed Silicon”Semiconductor Science Technology, Jun. 1998, pp. 615-621, vol. 13, No. 6, IOP Publishing Ltd., UK.

Affiliated with

Also associated with

Rating

Method of spark-processing silicon and resulting materials does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of spark-processing silicon and resulting materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of spark-processing silicon and resulting materials will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3796270