Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Patent
1995-12-06
1998-06-16
Ramsey, Kenneth J.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
2281231, 2281241, 228205, H01L 2158
Patent
active
057675775
ABSTRACT:
A method of solder bonding suitable for a body having a large bonding surface area including the following steps of cleaning off the bonding surfaces in vacuum chamber by impinging accelerated particles such as argon ions through reverse spattering; then covering with an oxidation inhibiting thin silver film over the cleaned off bonding surfaces through spattering; further sandwiching a cleaned off solder foil between the bonding surfaces covered with the oxidation inhibiting thin sliver film; and heating the solder foil in vacuum upto the melting temperature thereof to complete the bonding, whereby defects in the solder bonding is reduced downto about 1/25 and life time of the solder bonding which is affected by thermal fatigue is prolonged twice in comparison with a conventional solder bonding method, thereby reliability of the solder bonding is greatly improved.
REFERENCES:
patent: 4709844 (1987-12-01), Sekiguchi et al.
patent: 4921157 (1990-05-01), Dishon et al.
patent: 5182628 (1993-01-01), Izawa et al.
patent: 5377902 (1995-01-01), Hayes
Morita Toshiaki
Nihei Masayasu
Onuki Jin
Hitachi , Ltd.
Ramsey Kenneth J.
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