Method of slicing semiconductor single crystal ingot

Details Method of slicing semiconductor single crystal ingot Method of slicing semiconductor single crystal ingot

1997-03-21

1999-03-02

Rose, Robert A.

Stone working

Sawing

Reciprocating

125 1602, 451 41, B28D 108

Patent

active

058757694

ABSTRACT:
A method of slicing a semiconductor single crystal ingot by a wire saw slicing apparatus and a semiconductor wafer produced by the method, in which the running direction of the wire is not corresponding with the cleavage directions of the semiconductor single crystal ingot so that occurrence of cracks or breakage in the semiconductor wafer produced by the method can be suppressed significantly without any additional processes or an increase in cost.

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Duane O. Townley: "Optimum Crystallographic Orientation for Silicon Device Fabrication", Solid State Technology, vol. 16, No. 1, Jan. 1973, pp. 43-47.
Patent Abstracts of Japan, vol. 018, No. 427 (C-1235), Aug. 10, 1994, & JP 06 128092 A, (Toshiba Corp.), May 10, 1994.

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