Method of simultaneously manufacturing semiconductor regions hav

Details Method of simultaneously manufacturing semiconductor regions hav Method of simultaneously manufacturing semiconductor regions hav

1985-03-07

1987-03-31

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 148 15, 148187, 148DIG136, 148DIG77, 148DIG83, H01L 2138, H01L 21425

Patent

active

046531769

ABSTRACT:
A method of simultaneously manufacturing semiconductor regions having different doping concentrations, for example, for obtaining semiconductor resistors having differences values. Due to difference in the rate of oxidation, oxide edges of different widths can be formed by oxidation of n-type silicon regions thus obtained. According to the invention, ion implantation or deposition takes place through doping windows for each of which the ratio between the window surface area and the surface area to be doped is different. Subsequently, homogeneous doping concentrations are obtained by diffusion.

REFERENCES:
patent: 3432792 (1969-03-01), Hatcher, Jr.
patent: 3570114 (1971-03-01), Bean et al.
patent: 3739237 (1973-06-01), Shannan
patent: 3921283 (1975-11-01), Shappir
patent: 4329186 (1982-05-01), Kotecha et al.
Ion Implantation, Dearnaley et al., North-Holland Pub. Comp. Amsterdam, 1973.

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