Method of simultaneously forming a polycrystalline silicon gate

Details Method of simultaneously forming a polycrystalline silicon gate Method of simultaneously forming a polycrystalline silicon gate

1975-05-22

1977-04-05

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 29578, 148174, 156648, 357 4, 357 41, 357 42, 357 56, 357 59, 357 65, H01L 21203, H01L 2184, H01L 2978

Patent

active

040160165

ABSTRACT:
An improvement in polycrystalline silicon gate MOS integrated circuits made of silicon mesas on a sapphire substrate is provided. The improvement is an extension of a polycrystalline silicon gate onto the sapphire substrate as a single crystal layer. The single crystal layer is anisotrophically etched to slant its sidewalls. Metal contacts traversing the slanted sidewalls exhibit increased continuity and the single crystal layer exhibits improved conductivity. The polycrystalline silicon and single crystal silicon are formed simultaneously from a single source.

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Ronen et al., "Recent Advances in Thin-Film Silicon--Sapphire" Proc. IEEE, vol. 59, No. 10, Oct. 1971, pp. 1506-1510.
Zulegg, R., "Silicon-on-Sapphire--Microwave IC's" Electronics, Mar. 20, 1967, pp. 106-108.
Eaton, S. S., "Sapphire Brings Out the Best in C-MOS" Electronics, June 12, 1975, pp. 115-118.

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