Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2007-10-16
2007-10-16
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S002000, C117S003000, C117S013000, C117S014000, C117S020000, C117S029000, C117S202000, C117S932000
Reexamination Certificate
active
10558790
ABSTRACT:
To precisely predict the distribution of densities and sizes of void defects comprising voids and inner wall oxide membranes in a single crystal. The computer-based simulation determines, at steps1to7, the distribution of temperatures within a single crystal14growing from a melt12from the time of its pulling-up to the time of its completing cooling with due consideration paid to convection currents in the melt12. The computer-based simulation, at steps8to15, determines the density of voids considering the cooling process of the single crystal separated from the melt, that is, the pulling-up speed of the single crystal after the separation from the melt, and reflecting the effect of slow and rapid cooling of the single crystal in the result, and relates the radius of voids with the thickness of inner wall oxide membrane developed around the voids.
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Kitamura, K. et al., “Radial distribution of temperature gradients in growing CZ-Si crystals and its application to the prediction of microdefect distribution” “Journal of Crystal Growth” 242 (2002) pp. 293-301.
Furukawa Jun
Kitamura Kounosuke
Ono Naoki
Kunemund Robert
Rao G. Nagesh
Reed Smith LLP
Sumco Corporation
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