Method of simulation of production process of semiconductor...

Details Method of simulation of production process of semiconductor... Method of simulation of production process of semiconductor...

2005-12-27

2005-12-27

Frejd, Russell (Department: 2128)

Data processing: structural design, modeling, simulation, and em

Simulating electronic device or electrical system

Circuit simulation

C703S002000, C345S421000, C716S030000, C700S121000

Reexamination Certificate

active

06980942

ABSTRACT:
Plural boundary points are generated on a string on the surface of a material and a first length of a line segment between the boundary points is obtained. Then, the displacement of the boundary point according to a process model and the boundary point is moved by the displacement. A second length of the line segment between the boundary points after the boundary point is moved is found. When the second length is greater than a value obtained by multiplying the first length by a first factor exceeding 1, a new boundary point is added to the line segment whereas when the second length is smaller than a value obtained by multiplying the first length by a second factor less than 1, one of the boundary points of the line segment is eliminated.

REFERENCES:
patent: 5386374 (1995-01-01), Meng
patent: 5586230 (1996-12-01), Leon et al.
patent: 6192330 (2001-02-01), Nakamura
patent: 09327616 (1997-11-01), None
patent: 11031248 (1999-02-01), None
Kirchauer et al., Rigorous Three-Dimensional Photoresist Exposure and Development Simulation over Nonplanar Topography, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 16, No. 12, Dec. 1997, pp. 1431-1438.

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