Patent
1998-04-09
2000-04-11
Teska, Kevin J.
39550041, G06F 9455
Patent
active
060496614
ABSTRACT:
A method of simulating the shape of a sample after a surface reaction processing in a short calculation time, where a partial pressure P.sub.S of the reaction gas used for a surface reaction at the surface of the sample is calculated from an equation P.sub.S =P.sub.0 -R.times.J by using the partial pressure P.sub.0 of the reaction gas in the gas feed unit used for the surface reaction, a transport resistance R of the reaction gas in a chamber for performing the surface reaction, and a magnitude J of the flow of the reaction gas numerically found at the time of simulation and this P.sub.S is taken into account in the simulation to calculate the shape of the sample after the surface reaction processing.
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patent: 5230924 (1993-07-01), Li
patent: 5858476 (1999-01-01), Siess
Harafuji and Misaka, Dry Etching Topography Simulator with a New Surface Reation Model: Modern, Nov. 1995, pp. 1903-1911.
Misaka et al., A Simulation of Micro-Loading Phenomena in Dry-Etching Process using a New Adsorption Model, Jun. 1993, 857-860.
Rey et al., Numerical Simulation of CVD Trench Filling using a Surface Reation Coefficient Model, Jun. 1990, 425-427.
Fiul Dan
Sony Corporation
Teska Kevin J.
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