Patent
1995-11-01
1998-12-01
Teska, Kevin J.
G06F 9455
Patent
active
058451056
ABSTRACT:
A method of manufacturing a semiconductor device wherein the device is manufactured according to extracted process parameters. The process parameters are extracted as a set of optimum process parameters which satisfy an intended specification using process functions. The process functions describe a characteristic of the semiconductor device, and are determined using experimental values and/or simulated values. The process parameters may then be transmitted online to a factory.
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Eikyu Katsumi
Fujinaga Masato
Ishikawa Kiyoshi
Kotani Norihiko
Kunikiyo Tatsuya
Fiul Dan
Mitsubishi Denki & Kabushiki Kaisha
Teska Kevin J.
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