Method of simulating semiconductor device

Details Method of simulating semiconductor device Method of simulating semiconductor device

1998-04-10

2000-02-08

Teska, Kevin J.

39550023, G06F 1716

Patent

active

060235756

ABSTRACT:
The present invention provides a method of numeral simulation to a semiconductor device for solving an energy transport model by a coupled method, wherein initial values of carrier temperatures are calculated from an equation of carrier temperatures and an electric field which has been obtained by solving a drift-diffusion model.

REFERENCES:
patent: 5627772 (1997-05-01), Sonoda et al.
patent: 5819073 (1998-10-01), Nakamura
D. Chang et al., "Simplified Energy-Balance Model for Pragmatic Multi-Dimensional Device Simulation", pp.1795-1802, Solid-State Electronics, vol. 41, No. 11, 1997.
K. W. Chai et al., "Hydrodynamic Simulation of Electron Heating in Conventional and Lightly-Doped-Drain Mosfets with Application to Substrate Current Calculation", pp. 53-66, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, vol. 5, No. 1, Feb. 1992.
H. Kosina et al., "Device Modelling for the 1990s", pp. 217-233, Microelectronics Journal, vol. 26, No. 2, Mar. 1995.
J.J Liou, "Semiconductor device physics and modelling Part 1: Overview of fundamental theories and equations", pp. 646-660, IEE Proceedings-G, vol. 139, No. 6, Dec. 1992.
R. Thoma et al., "Hydrodynamic Equations for Semiconductors with Nonparabolic Band Structure", pp. 1343-1353, IEEE Transactions on electron Devices, vol. 38, No. 6, Jun. 1991.
R.K. Cook, "Numerical Simulation of Hot-Carrier Transport in Silicon Bipolar Transistors", pp. 1103-1110, IEEE Transactions on Electron Devices, vol. Ed-30, No. 9, Sep. 1983.

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