Method of simulating a semiconductor MOSFET

Details Method of simulating a semiconductor MOSFET Method of simulating a semiconductor MOSFET

1984-10-30

1986-04-22

Harkcom, Gary V.

Boots, shoes, and leggings

364801, 364300, G06G 762, G06G 748, G06F 700

Patent

active

045846626

ABSTRACT:
A method of simulating the voltage-current characteristics of a short channel metal-oxide-semiconductor field effect transistor (MOSFET) by connecting a series of incremental MOSFETs of different threshold voltages. The threshold voltages near the source and the drain are reduced due to charge sharing. The substrate of each reduced threshold voltage incremental MOSFET is connected to its source. The reduction in threshold voltage can be obtained by Schwartz-Christoffel transformation of the depletion layer edges of the charge sharing region. From these threshold voltages one can calculate the incremental channel conductances and the voltage drops.

REFERENCES:
patent: 4215420 (1980-07-01), Kassakian
patent: 4293916 (1981-10-01), Del Re et al.
patent: 4333157 (1982-06-01), Lee
patent: 4354250 (1982-10-01), Lee
patent: 4364116 (1982-12-01), Nossek
patent: 4425624 (1984-01-01), Planche

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