Method of SiC single crystal growth and SiC single crystal

Details Method of SiC single crystal growth and SiC single crystal Method of SiC single crystal growth and SiC single crystal

2005-05-13

2010-11-23

Kunemund, Robert M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step acting on the...

C117S003000, C117S109000, C117S937000

Reexamination Certificate

active

07837789

ABSTRACT:
A method of epitaxial growth of a 4H—SiC single crystal enabling growth of an SiC single crystal with low defects and low impurities able to be used for a semiconductor material at a practical growth rate, comprising growing a 4H—SiC single crystal on a 4H—SiC single crystal substrate by epitaxial growth while inclining an epitaxial growth plane of the substrate from a (0001) plane of the 4H—SiC single crystal by an off-angle of at least 12 degrees and less than 30 degrees in a <11-20> axial direction, and a 4H—SiC single crystal obtained by the same.

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Jul. 13, 2010 Japanese Office Action issued in Japanese Patent Application No. 2004-145179 with English translation.

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