Method of shifting a wavelength in a semiconductor structure hav

Details Method of shifting a wavelength in a semiconductor structure hav Method of shifting a wavelength in a semiconductor structure hav

1995-03-24

1998-01-13

Kunemund, Robert

Fishing, trapping, and vermin destroying

437129, 437160, 437161, H01L 21225

Patent

active

057078904

ABSTRACT:
From a top face of a semiconductor structure of the III-V type, inter-diffusion of elements between the wells and the barriers of an internal quantum structure is hot induced. The inter-diffusion is performed in one segment of the structure only, namely a segment in which the characteristic wavelength is to be shifted so as to constitute an amplitude modulator, another segment of the structure including a Bragg grating so as to constitute a laser emitter. In accordance with the invention, the inter-diffusion is induced by a layer of indium maintained in contact with the top face by means of a dielectric encapsulation layer. The invention is applicable in particular to optical telecommunications.

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