Method of shallow junction formation in semiconductor devices us

Details Method of shallow junction formation in semiconductor devices us Method of shallow junction formation in semiconductor devices us

1992-12-21

1994-05-31

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437942, 437950, 148DIG129, H01L 21223

Patent

active

053169697

ABSTRACT:
Shallow regions are formed in a semiconductor body by irradiating the surface region with a pulsed laser beam in an atmosphere including the dopant. The pulsed laser beam has sufficient intensity to drive in dopant atoms from the atmosphere but insufficient intensity to melt the semiconductor material. A silicide layer can be placed over the surface of the semiconductor material prior to irradiation with the dopant being driven from the atmosphere through the silicide into the surface region of the semiconductor body. Alternatively, the silicide layer can include dopant atoms prior to irradiating the surface region.

REFERENCES:
patent: 4151008 (1979-04-01), Kirkpatrick
patent: 4558507 (1985-12-01), Okabayashi et al.
patent: 4661177 (1987-04-01), Powell
patent: 4669176 (1987-06-01), Kato
patent: 4914500 (1990-04-01), Liu et al.
patent: 5114876 (1992-05-01), Weiner

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