Method of setting processing condition in photolithography...

Photocopying – Projection printing and copying cameras – With temperature or foreign particle control

Reexamination Certificate

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C355S053000, C378S034000, C378S035000

Reexamination Certificate

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07420650

ABSTRACT:
In the present invention, in the photolithography process in which a certain processing condition has been already set, a resist film on a substrate is exposed to light using a mask, which reduces only zero-order light of a light source at a predetermined light reduction rate and transmits the light, and then heated and developed so that the film on the substrate is reduced. Thereafter, the reduction in film thickness of the resist film is measured. The measured reduction in film thickness is then converted into a line width of a resist pattern on the already-set processing condition by a correlation function between the reduction in film thickness and the line width. Based on the converted line width, the temperature setting of the heating temperature at the time of heating after the exposure is performed. Consequently, the condition setting in the photolithography process is appropriately performed, resulting in improved uniformity of the line width of the resist pattern within the substrate.

REFERENCES:
patent: 6410194 (2002-06-01), Yoshihara
patent: 6816230 (2004-11-01), Lim
Masafumi Asano, et al, “CD Control with Effective Exposure Dose Monitor Technique in Photolithography”, Proc. SPIE vol. 4691, 2002, pp. 280-287.
Alexander Starikov, “Exposure Monitor Structure”, SPIE vol. 1261 Integrated Circuit Metrology, Inspection, and Process Control IV (1990), pp. 315-324.

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