Method of separating wafers into individual die

Etching a substrate: processes – Mechanically shaping – deforming – or abrading of substrate

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438462, 438465, 438113, 438460, 216 17, 216 65, H01L 21786

Patent

active

061173479

ABSTRACT:
A method of separating a wafer into individual die is disclosed. The wafer includes a substrate with organic thin-film multiple layers. A portion of the organic multiple layers is etched along a scribe line with excimer laser to form a groove to expose a portion of the substrate before sawing the substrate along the scribe line with a saw blade. Plasma etching or ion beam etching or sand blasting is an alternative to the excimer laser.

REFERENCES:
patent: 4617085 (1986-10-01), Cole, Jr. et al.
patent: 5157001 (1992-10-01), Sakuma
patent: 5171716 (1992-12-01), Cagan et al.
patent: 5337466 (1994-08-01), Ishida
patent: 5521125 (1996-05-01), Ormond et al.
patent: 5593927 (1997-01-01), Farnworth et al.
patent: 5597767 (1997-01-01), Mignardi et al.
patent: 5736453 (1998-04-01), Kadonishi
patent: 5786266 (1998-07-01), Boruta
patent: 5811019 (1998-09-01), Nakayama et al.
"Method of Preventing Damage to Integrated Circuit Chips During Wafer Dicing", IBM Technical Disclosure Bulletin, vol. 34, No. 12, May 1, 1992, pp. 311-312.

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