Method of separating semiconductor dies

Semiconductor device manufacturing: process – Semiconductor substrate dicing – With attachment to temporary support or carrier

Reexamination Certificate

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C438S033000, C438S068000, C438S113000, C438S114000, C438S458000, C438S460000, C438S461000, C438S462000, C438S463000, C438S465000, C257SE21214, C257SE21237

Reexamination Certificate

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07829440

ABSTRACT:
A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, a seed metal layer may be used to grow hard metal layers above it for handling. Metal may be plated above these metal layers everywhere except where a block of stop electroplating (EP) material exists. The stop EP material may be obliterated, and a barrier layer may be formed above the entire remaining structure. The substrate may be removed, and the individual dies may have any desired bonding pads and/or patterned circuitry added to the semiconductor surface. The remerged hard metal after laser cutting and heating should be strong enough for handling. Tape may be added to the wafer, and a breaker may be used to break the dies apart. The resulting structure may be flipped over, and the tape may be expanded to separate the individual dies.

REFERENCES:
patent: 5157001 (1992-10-01), Sakuma
patent: 5552345 (1996-09-01), Schrantz et al.
patent: 6562648 (2003-05-01), Wong et al.
patent: 6660550 (2003-12-01), Sato
patent: 7452739 (2008-11-01), Chu et al.
patent: 2002/0106871 (2002-08-01), Le et al.
patent: 2006/0079024 (2006-04-01), Akram
patent: 2006/0105542 (2006-05-01), Yoo
patent: 2006/0128118 (2006-06-01), Nagahama et al.
PCT International Search Report and Written Opinion dated Mar. 3, 2008.

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