Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices
Reexamination Certificate
2011-06-28
2011-06-28
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Making plural separate devices
C438S464000, C438S462000, C257SE21175, C257SE21479, C257SE21238
Reexamination Certificate
active
07968379
ABSTRACT:
A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, metal layers are deposited everywhere except where a block of stop electroplating material exists. The stop electroplating material is obliterated, and a barrier layer is formed above the entire remaining structure. A sacrificial metal element is added above the barrier layer, and then the substrate is removed. After the semiconductor material between the individual dies is eradicated, any desired bonding pads and patterned circuitry are added to the semiconductor surface opposite the sacrificial metal element, a passivation layer is added to this surface, and then the sacrificial metal element is removed. Tape is added to the now exposed barrier layer, the passivation layer is removed, the resulting structure is flipped over, and the tape is expanded to separate the individual dies.
REFERENCES:
patent: 3913217 (1975-10-01), Misawa et al.
patent: 4640739 (1987-02-01), Modic et al.
patent: 5300788 (1994-04-01), Fan et al.
patent: 5453405 (1995-09-01), Fan et al.
patent: 5882986 (1999-03-01), Eng et al.
patent: 6391658 (2002-05-01), Gates et al.
patent: 6403985 (2002-06-01), Fan et al.
patent: 6458619 (2002-10-01), Irissou
patent: 6607941 (2003-08-01), Prabhu et al.
patent: 6787866 (2004-09-01), Fujii et al.
patent: 6846692 (2005-01-01), Silverbrook
patent: 7413925 (2008-08-01), Egawa
patent: 2003/0020084 (2003-01-01), Fan et al.
patent: 2005/0167798 (2005-08-01), Doan
patent: 2005/0248352 (2005-12-01), Fuchs et al.
patent: 2005/0269700 (2005-12-01), Farnworth et al.
patent: 2006/0151801 (2006-07-01), Doan et al.
patent: 2006/0154393 (2006-07-01), Doan et al.
patent: 2007/0017438 (2007-01-01), Xie et al.
patent: 2007/0284681 (2007-12-01), Massieu et al.
PCT International Search Report and Written Opinion dated Oct. 17, 2007.
Cheng Hao-Chun
Chu Chen-Fu
Doan Trung Tri
Fan Feng-Hsu
Wang Fu-Hsien
Fourson George
Patterson & Sheridan L.L.P.
SemiLEDs Optoelectronics Co. Ltd.
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