Method of separating a semiconductor wafer with dielectrics

Details Method of separating a semiconductor wafer with dielectrics Method of separating a semiconductor wafer with dielectrics

1995-05-31

1997-03-04

Dang, Trung

Fishing, trapping, and vermin destroying

437 62, 437974, 437 67, 437 64, 148DIG50, H01L 2176

Patent

active

056078757

ABSTRACT:
A method for separating a joined substrate type wafer, which wafer is composed of a pair of semiconductor substrates joined through an insulation film, utilizes dielectrics through simple processing steps. Trenches for separating a semiconductor substrate with dielectrics are dug from the surface of the substrate and a dielectrics film is deposited on the surface of the substrate including the trenches. Then poly-crystalline silicon is grown by CVD to a thickness of about 0.5 .mu.m, which is deep enough to fill the trenches. The process time for growing poly-crystalline silicon is shortened, and the processing step for removing the poly-crystalline silicon deposited on the unwanted areas is eliminated by growing the poly-crystalline silicon in the trenches but not on the crystalline surface of semiconductor regions based on the growth rate dependence of the poly-crystalline silicon on the crystallinity of the surface on which the poly-crystalline silicon is grown.

REFERENCES:
patent: 5124274 (1992-06-01), Ohki et al.
patent: 5336634 (1994-08-01), Katayama et al.

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