Method of separately fabricating a base/emitter structure of a B

Details Method of separately fabricating a base/emitter structure of a B Method of separately fabricating a base/emitter structure of a B

1991-10-18

1992-10-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 34, 437 41, 437 56, H01L 21265

Patent

active

051589001

ABSTRACT:
A method of fabricating a BiCMOS device in which PMOS and NMOS transistors are formed prior to a base/emitter structure of a bipolar transistor. In forming the base/emitter structure, a blanket implant of a first impurity is introduced into a base region of a semiconductor substrate. An insulating layer is deposited and then patterned to expose a portion of the base region at an emitter window. A polysilicon layer is deposited on the insulating layer and into the emitter window. The polysilicon layer is patterned to provide the desired configuration at the emitter window, whereafter the remaining polysilicon acts as a mask for etching of the insulating layer. Thus, etching of the insulating layer is performed in a self-aligning manner. Self-alignment is also utilized in providing a base-link region and in providing a silicide layer.

REFERENCES:
patent: 4727046 (1988-02-01), Tuntasood et al.
patent: 4774204 (1988-09-01), Havemann
patent: 4803175 (1989-02-01), Alvarez et al.
patent: 4902639 (1990-02-01), Ford
patent: 4914048 (1990-04-01), Scovell et al.
patent: 4927776 (1990-05-01), Soejima
patent: 4962053 (1990-10-01), Spratt et al.
patent: 4983531 (1991-01-01), Cosentino
patent: 4988633 (1991-01-01), Josquin

Affiliated with

Also associated with

Rating

Method of separately fabricating a base/emitter structure of a B does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of separately fabricating a base/emitter structure of a B, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of separately fabricating a base/emitter structure of a B will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-905298