Method of semiconductor integrated circuit manufacturing which i

Fishing – trapping – and vermin destroying

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437 61, 437 69, 437 52, H01L 2176

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051107562

ABSTRACT:
Defect density in a semiconductor process sequence that uses two local oxidations is reduced by using an approximately 1:1 ratio of nitride to oxide thickness in the second local oxidation step and an annealing step.

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patent: 5012307 (1991-04-01), Gill et al.
patent: 5032533 (1991-07-01), Gill et al.
"Journal of Vacuum Science and Technology," 16.

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