Method of self-aligning an oxide aperture with an annular...

Details Method of self-aligning an oxide aperture with an annular... Method of self-aligning an oxide aperture with an annular...

2005-07-12

2005-07-12

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S039000

Reexamination Certificate

active

06916672

ABSTRACT:
A method of forming a vertical cavity surface emitting laser (100, 600, 900) includes process steps for self-aligning the p-type ohmic contact (118, 518, 932), an oxide current aperture (122, 926a), and a central puck of re-phase material (560a, 936) around the optical axis of the laser.

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