Fishing – trapping – and vermin destroying
Patent
1995-06-07
1997-12-16
Nguyen, Tuan H.
Fishing, trapping, and vermin destroying
437 32, 437126, 437133, 148DIG10, 148DIG72, H01L 21265
Patent
active
056984600
ABSTRACT:
A self-aligned planar heterojunction bipolar transistor (10) is fabricated by forming a base layer (18) and forming an emitter layer (20) on the base layer (18). An emitter cap layer (22) is formed on the emitter layer (20) and an interface layer (24) is formed on the emitter cap layer (22). A first implantation layer (26) is formed through the interface layer (24), the emitter cap layer (22), and the emitter layer (20) to the base layer (18). A second implantation layer (30) is formed through the interface layer (24), the emitter cap layer (22), and the emitter layer (20) to the base layer (18) and overlaps the first implantation layer (26). A portion of the interface layer (24), the emitter cap layer (22), and the implantation layers (26, 30) are removed and replaced by an insulating region (33). An emitter contact (38) is formed on the remaining emitter cap layer (22) and is isolated from the implantation layers (26, 30) by the insulating region (33). The insulating region (33) acts as a buffer to self-align the emitter contact (38) to the implantation layer (26, 30).
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Morris Francis J.
Plumton Donald L.
Yang Jau-Yuann
Donaldson Richard L.
Kesterson James C.
Maginniss Christopher L.
Nguyen Tuan H.
Texas Instruments Incorporated
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